http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070048220-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1755eede76ea7e719a3e0d2843cd793 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68354 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-68327 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6836 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78 |
| filingDate | 2004-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b54196c18392457dc4984d7eb5aef80 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddb15b3ad3fdd66baacf53abd953d76c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a49153df6022aaaf18d0957093a87ca7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68563569b71c46c4f14d56516be6de3d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97b5d9834cc3c21bebcd7ff124f283bd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f25ecd782c46789a0c771c686e04c26b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b81a01be5f717849923d67159e3c1fa3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1df3d700c72e2b4f89bd5121a367efae |
| publicationDate | 2007-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070048220-A |
| titleOfInvention | Manufacturing method of IC chip |
| abstract | An object of the present invention is to provide a method for manufacturing an IC chip capable of producing a very thin IC chip having a thickness of 50 µm or less, for example, about 25 to 30 µm with high productivity. In the present invention, the wafer containing at least one of the double-sided adhesive tape containing a gas generator generating gas by light irradiation in the adhesive layer on at least one surface thereof and the wafer are faced each other to provide the wafer. Step 1 of fixing the support plate, Step 2 of grinding the wafer in a state where the wafer is fixed to the support plate via the double-sided adhesive tape, Step 3 of irradiating light to the double-sided adhesive tape, and the double-sided adhesive tape from the wafer It is a manufacturing method of the IC chip which has a process 4 which peels off, In a process 3, the gas discharge rate from the said double-sided adhesive tape is 5 microliters / cm <2> * min or more, It is a manufacturing method of the IC chip.n n n n Adhesive Tape, Gas Generator |
| priorityDate | 2007-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 128.