http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070044926-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1037
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-335
filingDate 2005-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5b25e001fbadd6a250f4783c21aa9395
publicationDate 2007-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20070044926-A
titleOfInvention Method of manufacturing semiconductor device having recess channel
abstract A method of manufacturing a semiconductor device having a recess channel of the present invention includes forming a hard mask film pattern on an active region of a semiconductor substrate defined by an isolation layer, and oxidizing the semiconductor substrate exposed by the hard mask film pattern. Forming a sacrificial oxide film, removing the sacrificial oxide film to form a recess region, and etching the semiconductor substrate of the recess region exposed by the hard mask film pattern to a predetermined depth to form a recess channel trench. Removing the hard mask film pattern; forming a gate insulating film on the semiconductor substrate in the recess channel trench; and filling the recess channel trench with the gate electrode pattern overlapping the recess channel trench. Forming a step.n n n n Recess channel, trench, corner, field concentration
priorityDate 2005-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 22.