| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1784eb7fc902d292db30e120ec712d5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3227
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5436
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-77
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-446
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-72
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-5409 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-645
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-547 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C04B35-645 |
| filingDate |
2004-02-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_177ef4be143f7f04e6ebf43e4ac7dd02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_562f1ece2f2e6abc7634af8502f4d25f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6841a93dcacdc2e46e9604b650956471
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47ab3fb887c8376b6f00a8a1e0b6a3d9 |
| publicationDate |
2007-04-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20070042590-A |
| titleOfInvention |
Sputtering Target and Manufacturing Method Thereof |
| abstract |
The present invention is to sinter one or more powders selected from a single element, an oxide, or a chalcogenide of a constituent element as a raw material, and includes a reaction step of holding at least one hour at a temperature of 850 ° C. or lower during the sintering step. The present invention relates to a method for producing a sputtering target containing oxychalcogenide containing La and Cu as a main component, characterized by pressure sintering at a temperature higher than the reaction step temperature. The density of the target for P-type transparent conductive materials mainly containing oxychalcogenide containing La and Cu can be improved, making the target larger, and at a lower cost. The object of the present invention is to increase the production rate of the product by eliminating the presence of the reactant to suppress the occurrence of the target breakage, and to improve the quality of the film formed by sputtering using the target.n n n Sputtering Target and Manufacturing Method Thereof |
| priorityDate |
2003-03-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |