http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070039620-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4efee27937b4a512f45809fed5293747 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-21 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B15-206 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B15-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-02 |
| filingDate | 2002-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fb3b2149e7ce72a2e974f871735c56f6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a28bf58c578dd149e13ade5f8bb024a1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2371ee579bb557a4a8df694672887fa8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b55e06d1811ba2750d1975fb80bbcd85 |
| publicationDate | 2007-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070039620-A |
| titleOfInvention | Low defect density silicon with bake dominant core substantially free of oxidation induced lamination defects |
| abstract | The present invention relates to a single crystal silicon ingot and a method for producing an ingot or wafer obtained therefrom. The method includes a first axisymmetric region radially inwardly extending from the lateral surface of the ingot and extending radially inwardly from the first region toward the central axis of the ingot from the first region where silicon self-interstitial is the predominant intrinsic point defect. To induce the formation of a segment comprising biaxially symmetric regions, (i) control the growth rate v, (ii) the average axial temperature gradient G 0 , and (iii) the cooling rate of the crystal from the freezing point to about 750 ° C. It includes a step. The method controls v, G 0 and cooling rates to prevent the formation of agglomerated intrinsic point defects in the first region, while the wafers obtained from these segments belong to oxidation treatments suitable for the formation of oxidation induced lamination defects. In order to limit the formation of such defects on the wafer, the cooling rate is further controlled.n n n n Crystal Impressor, Monocrystalline Silicon Ingot, Oxidation-Induced Lamination Defects |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101446720-B1 |
| priorityDate | 2001-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.