http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070039351-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0206 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2652 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2005-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4720322cc575cefd63bdcc5dac2d105b |
| publicationDate | 2007-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070039351-A |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device, and has an effect of preventing increase in junction leakage current and generation of edge moats.n n n According to an aspect of the present invention, there is provided a method of fabricating a semiconductor device, the method comprising: forming a pad nitride film exposing a field region on a semiconductor substrate; Etching the semiconductor substrate exposed by the pad nitride layer to form a trench; Forming an oxide film along the surface of the trench; Performing a nitriding process to modify the oxide film to a nitride film; Forming an HDP oxide film over the entire structure to fill the trench; CMP the upper portion of the HDP oxide film to expose the pad nitride film; Removing the pad nitride film exposed by the CMP process; And forming a well ion implantation region in the semiconductor substrate by performing a well ion implantation process.n n n n Well Ion Implantation, Junction Leakage Current, Mort |
| priorityDate | 2005-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 14.