http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070032824-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0676 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0665 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66242 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7378 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-737 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 2005-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070032824-A |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | The present invention relates to a semiconductor device (10) having a substrate (11) and a semiconductor body (12), the semiconductor body having a first conductivity type and a second conductivity type opposite to the first conductivity type, respectively. A vertical bipolar transistor having an emitter region, a base region, and collector regions 1, 2, 3, which are of the type, wherein the collector region 3 comprises a first sub-region 3A and a first sub-region adjacent to the base region 2; A second sub-region 3B adjacent to the first sub-region 3A, wherein the doping concentration of the first sub-region 3A is lower than the doping concentration of the second sub-region 3B, A gate electrode 5 transversely adjacent to the first sub-region 3A is provided, whereby the first sub-region 3A can be depleted. According to the invention the collector region 3 is adjacent to the surface of the semiconductor body 12, the emitter region 1 is recessed in the semiconductor body 12, and the collector region 3 is formed of the semiconductor body 12. A part of the mesa structure 6 formed on the surface is formed. Such a device 10 has very desirable properties at high frequencies and high voltages and is easy to manufacture. In a preferred embodiment the collector 3 comprises nanowires 30 forming a mesa structure 6. |
| priorityDate | 2004-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123 |
Total number of triples: 26.