| abstract |
The aqueous slurry of the present invention is useful for chemical mechanical polishing of semiconductor substrates having copper interconnects. The aqueous slurry is 0.01 to 25% by weight oxidant, 0.1 to 50% by weight abrasive particles, 0.001 to 3% by weight polyvinyl pyrrolidone, 0.01 to 10% by weight inhibitor to reduce the static etch of the copper interconnect, 0.001 to 5% by weight of phosphorus-containing compound to increase the removal rate of the copper interconnect, 0.001 to 10% by weight of complexing agent produced during polishing and balance water, wherein the aqueous slurry has a pH of 8 or greater. |