http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070028810-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5ad96a7dcc49390e878c49a36a7b3178 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2005-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1fa23059c5ec0fdf54bbebd6c8087de http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fe5fa142241f640e2e698c9a905dc1c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3caace80b50dd1dcdb00669fd26f61c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0bb0319442999384444429328e43e1a0 |
| publicationDate | 2007-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070028810-A |
| titleOfInvention | Titanium aluminum nitride thin film formation method using atomic layer deposition method |
| abstract | The present invention relates to a method for manufacturing a TiAlN thin film having few impurities using atomic layer deposition and controlling resistance, and having excellent step coating properties. (A) introducing a semiconductor substrate into a reaction vessel, and (b) reaction. Introducing a Ti precursor into the vessel, (c) purging the Ti precursor from the reaction vessel, (d) introducing a reaction gas into the reaction vessel to form a TiN thin film, and (e) forming an Al precursor into the reaction vessel. (F) purging the Al precursor in the reaction vessel, (g) introducing the reaction gas into the reaction vessel to form TiAlN, and (h) purging the reaction gas in the reaction vessel. It has one cycle, and changes the flow rate of gas, deposition temperature, deposition pressure, etc. to control Al composition to control the resistance value of TiAlN, and iteratively controls the thickness to deposit TiAlN thin film. .n n n According to the present invention, the TiAlN thin film having less impurities and the resistance value can be controlled, and the TiAlN thin film having excellent step coating properties can be manufactured. Also, the TiAlN thin film can be controlled by controlling the inflow rate of the Al precursor and the Ti precursor into the reaction vessel in the same circulation. The composition of Al can be changed to form a thin film having a desired resistance value. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100867633-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106298663-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100852237-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200126469-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-106298663-B |
| priorityDate | 2005-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.