http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070017457-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-42 |
| filingDate | 2003-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-02-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070017457-A |
| titleOfInvention | Etching of Patterned Silicon Layer |
| abstract | Applying the silicone composition to the surface of the substrate to form a film (i),n n n Exposing a portion of the film to radiation to produce a partially exposed film having an unexposed area covering a portion of the surface and an exposed area covering the remainder of the surface, (ii)n n n Heating the partially exposed film for a period of time such that the exposed areas are substantially insoluble in the developing solvent and the unexposed areas are soluble in the developing solvent (iii),n n n Removing the unexposed areas of the heated film with a developing solvent to form a patterned film (iv),n n n (V) heating the patterned film for a period of time sufficient to form a cured silicone layer andn n n Exposing or removing all or a portion of the cured silicone layer to an anhydrous etching solution comprising an organic solvent and a base (vi),n n n A method of reworking semiconductor material.n n n Etching Method, Photoresist, Photo Formation, Rework, Cleaning |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200037346-A |
| priorityDate | 2003-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 112.