Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_49f04b1dc6b9fcc2d8b159c5ebee364b |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18388 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18308 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-02345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0217 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0207 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-04257 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-18305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-026 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-42 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-183 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-02 |
filingDate |
2005-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_caae9d63e507a65c95fc8dbe5d87b874 |
publicationDate |
2007-01-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20070011465-A |
titleOfInvention |
Semiconductor light emitting device and method for manufacturing same |
abstract |
The semiconductor light emitting element LE1 includes a multilayer structure LS for generating light. The multilayer structure includes a plurality of stacked compound semiconductor layers 3-8 and has first and second main surfaces 61 and 62 opposing each other. The first electrode 21 is disposed on the first main surface, and the second electrode 31 is disposed on the second main surface. On the first main surface, a film 10 made of silicon oxide is also formed to cover the first electrode. The glass plate 1, which is optically transparent to light generated by the multilayer structure, is fixed to the multilayer structure through a film made of silicon oxide. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160028086-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101448996-B1 |
priorityDate |
2004-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |