| abstract |
After the interlayer insulating film 14 covering the ferroelectric capacitor is formed, the hydrogen diffusion preventing film 18, the etching stopper 19, and the interlayer insulating film 20 are formed. By the single damascene method, wirings including the TaN film 21 (barrier metal film) and the Cu film 22 are formed in the interlayer insulating film 20. After that, a wiring including the Cu film 29 and a wiring including the Cu film 36 are further formed by the dual damascene method. |