http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070007018-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d78fe473c8a29219129bbc8bb50f6a59 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2004-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adbc648b22c21e73fa9811ef52b83133 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3309b3524f3c814ee66cea95c734ac86 |
| publicationDate | 2007-01-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070007018-A |
| titleOfInvention | Cleaning Method of Laminated Substrate, Bonding Method of Substrate and Manufacturing of Bonded Wafer |
| abstract | The present invention provides a method of cleaning a laminated substrate in which a protective film is formed on the surface of the SiGe layer of the laminated substrate outermost layer and then washed so that the protective film remains with a cleaning liquid capable of etching the protective film, and the outermost layer of the laminated substrate washed by the method. Substrate bonding method for bonding the surface layer of another substrate and Si single crystal bond Si 1 - X Ge X layer and protective layer are sequentially formed on the surface of the wafer, and ion implanted through the protective layer to form an ion implantation layer, and bond The wafer is washed, the surface of the protective layer and the base wafer are brought into close contact with each other, the exfoliation is performed at the ion implantation layer, and a thermal oxide film is formed on the surface of the exfoliation layer moved to the base wafer side by exfoliation to remove the concentrated SiGe layer. And a method of manufacturing a bonded wafer in which the Si single crystal layer is epitaxially grown on the surface thereof. As a result, a cleaning method and a bonding method for preventing surface roughness of the SiGe layer of the laminated substrate outermost layer, and a method for manufacturing a bonded wafer for preventing bonding defects caused by ion implantation are provided. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101462397-B1 |
| priorityDate | 2003-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 23.