http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070003060-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
filingDate 2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e6802e4f106773691135b64ee69c69d0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_23b49665e991ff891fece856a286b979
publicationDate 2007-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20070003060-A
titleOfInvention Trench isolation film formation method of semiconductor device
abstract The method of forming a trench isolation layer of a semiconductor device according to the present invention includes forming a pad oxide film and a nitride film pattern sequentially on a semiconductor substrate, and sequentially etching the nitride film pattern and the pad oxide film to form a relatively narrow first width and a relatively wide second width. Forming a device isolation trench, a thermal oxidation process to form a thermal oxide film inside the device isolation trench, and sequentially forming a liner nitride film and a liner oxide film on the entire surface of the thermal oxide film formed product; And removing the liner oxide film, the liner nitride film, and the thermal oxide film formed on the bottom surface of the device isolation trench having a second width, exposing the semiconductor substrate through the bottom surface of the device isolation trench, and filling the buried oxide film inside the device isolation trench. Forming a device isolation film.
priorityDate 2005-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419528763

Total number of triples: 16.