| abstract |
When the conventional TFT has a reverse staggered structure, it is necessary to form a resist mask through an exposure, a developing step, and a droplet discharging step to form an island-shaped semiconductor region. This resulted in an increase in the number of processes and material types. According to the present invention, after forming the source region and the drain region, the island-like semiconductor film is formed by covering the portion that becomes the channel region with an insulating film that functions as a channel protective film. Therefore, the semiconductor device is formed only by the metal mask without the need for providing a resist mask. Since it can manufacture, a process can be simplified. |