| abstract |
The present invention provides a method of manufacturing a fin structure field effect transistor having a vertical channel that can prevent the increase of roughness due to damage to the surface of the fin during the etching process for removing the pad nitride film and the height reduction of the device isolation film due to the loss of the liner nitride film. To this end, the present invention is to form a pad oxide film and a pad nitride film on the substrate, and to form a trench by etching the pad nitride film, the pad oxide film and the substrate, and isolated in the trench Forming a separated device isolation layer, recessing the device isolation layer to form a fin having an active region protruding therefrom, forming a protective film on the protruding surface of the fin, and removing the pad nitride layer It provides a method for manufacturing a field effect transistor comprising the step. |