http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070000608-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66825 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2005-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca1545876ea990f34413445f92808540 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bfc22a53765b5a189751025577abf230 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_141e63d48493946a0c0731de6f9ae446 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a4a8bf96e7cb8564b763eefff940eb0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a7785db2231dc2cc5e2768c514d2ddea http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cc87394902c86904ec9693bbf7df24a |
| publicationDate | 2007-01-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070000608-A |
| titleOfInvention | Device Separating Method of Semiconductor Device |
| abstract | In the device isolation film formation method of a semiconductor device, the hard mask pattern which partially exposes the surface of a board | substrate is formed on a board | substrate. After etching the exposed substrate to form a first trench, a first oxide layer having a uniform thickness on the surfaces of the first trench and having a seam in a central portion thereof is formed. A second oxide film is formed on the first oxide film to fill the shim. The second trench is formed by removing upper portions of the first and second oxide layers so that the side surface of the hard mask pattern is partially exposed. After forming the third oxide layer filling the second trench, the hard mask pattern is removed. do. Subsequently, a portion of the third oxide film, a portion of the second oxide film, and a portion of the first oxide film are removed to complete the device isolation film higher than the surface of the substrate. Accordingly, the trench device isolation film having a stable device isolation film characteristic may be formed by filling the trench sufficiently without generation of voids or seams. |
| priorityDate | 2005-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419524028 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID9009 |
Total number of triples: 21.