http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070000211-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28035 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2005-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd7a88eb63172720ea1bfa19d641366c |
| publicationDate | 2007-01-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070000211-A |
| titleOfInvention | Method for fabricating semiconductor device |
| abstract | BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor manufacturing technology, and more particularly, to a semiconductor device manufacturing process that prevents device deterioration characteristics caused by particles during formation of a recess gate electrode in a semiconductor device manufacturing process. To this end, the present invention comprises the steps of: forming a recess in a gate formation region on a substrate, forming a gate insulating film on the substrate on which the recess is formed, depositing a polysilicon film with a thickness sufficient to fill the recess, Etching a polysilicon film to planarize, depositing a metal film on the polysilicon film, and optionally etching the polysilicon film and the metal film to form a gate electrode pattern is provided. do. |
| priorityDate | 2005-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID2244 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419556224 |
Total number of triples: 16.