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filingDate 2004-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2006-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20060135701-A
titleOfInvention Electrical Device and Hexagonal Junction Formation Method
abstract The electrical device according to the invention comprises a pn heterojunction 4 formed of a nanostructure 3 of a group III-V semiconductor material and a semiconductor body 1 comprising a group IV semiconductor material. The nanowire 3 is positioned in direct contact with the surface 2 of the semiconductor body 1 and has a first conductivity type, the semiconductor body 1 has a second conductivity type opposite to the first conductivity type, and the nano The wire 3 forms a pn release junction 4 with the semiconductor body 1. Nanowires of the III-V semiconductor material can be used as a diffusion source of dopant atoms to the semiconductor body. Diffused Group III atoms and / or Group V atoms from the III-V materials are dopant atoms that form a region 6 in the semiconductor body in direct contact with the nanowires 3.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120027235-A
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Total number of triples: 41.