| abstract |
The present invention provides a TFT which does not form sidewall spacers, does not increase the number of processes, and has at least one LDD region self-aligning. According to the present invention, a photomask or a reticle having an auxiliary pattern having a light intensity reduction function formed of a diffraction grating pattern or a semi-permeable film is applied to a photolithography process for forming a gate electrode, where the film thickness is thicker, By forming an asymmetric resist pattern having thin regions on one side, forming a gate electrode having a step, implanting impurity elements into the semiconductor layer through the thin region of the gate electrode, and self-aligning LDD. Form an area. |