| abstract |
The present invention relates to cleaning semiconductor wafers after chemical-mechanical planarization (CMP) of the wafers during fabrication of the semiconductor device. An alkaline chemical for post-CMP cleaning of wafers containing metal, particularly copper interconnects, is disclosed. Residual slurry particles, in particular copper or other metal particles, can be used to significantly etch the metal while preventing oxidation and corrosion of the metal, leaving deposits on the surface or leaving the wafer without significantly contaminating the wafer. Removed. In addition, one or more strong chelating agents are present to complex with the metal ions in the solution to promote removal of metal from the dielectric material and to prevent redeposition on the wafer. |