http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060121597-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C25D5-34
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-24
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C25D5-34
filingDate 2005-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f1abaf3a583a292c1163b350285556c
publicationDate 2006-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20060121597-A
titleOfInvention Plating Pretreatment Method of Titanium Substrate
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plating pretreatment method for an underlayer of the method for producing a base layer of a plating electrode in electroplating, and more particularly to a platinum plating pretreatment method for a titanium-based underlayer.n n n The plating pretreatment method of the titanium base material of the present invention is characterized by removing the adhesive organic material and the oxide film on the surface of the base material by using a plasma technique as a pretreatment method for the titanium base material before platinum plating.n n n When the plating pretreatment of the titanium substrate according to the present invention is carried out, there is an effect that the sulfuric acid-based or hydrofluoric acid-based aqueous waste, which is a risk factor during operation, does not occur. In addition, the plasma treatment of the present invention can be carried out at a considerably fast speed in the plasma chamber, thereby reducing the risk of work and the effect of completing the pretreatment within minutes.
priorityDate 2005-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 18.