http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060117169-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_33c922e05f6133b7d72dbb849d77487d |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02118 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02288 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D11-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-32 |
filingDate | 2005-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_25dc3b3c0ae96b67a9f6cc1c14304649 |
publicationDate | 2006-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20060117169-A |
titleOfInvention | High resolution pattern formation method using direct pattern method |
abstract | The present invention provides a method of manufacturing a semiconductor device, comprising: a first step of providing a sacrificial layer of a first material with a partially or entirely formed substrate; A second step of forming a pattern groove having a line width of the first resolution without a first material in the sacrificial layer by a first means for preliminarily forming a direct sacrificial layer; And a third step of filling the pattern groove with a second material at a second resolution using a second means, the method comprising: forming a pattern with a second material on a substrate; Thereby providing a substrate.n n n The pattern forming method according to the present invention can reduce the production cost because a high resolution pattern can be obtained without wasting or minimizing the second material for pattern formation and a second means having a low resolution such as an ink jet method, By combining a first means having a high resolution, such as a focusable energy beam, a high resolution pattern can be produced with high process efficiency. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8216635-B2 |
priorityDate | 2005-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 148.