http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060114439-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01H1-26 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2005-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4521cc380eee85d16996c8b8ebce0b38 |
| publicationDate | 2006-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060114439-A |
| titleOfInvention | Method of manufacturing mask of semiconductor device |
| abstract | The present invention can simplify the process of manufacturing a CPL mask or PSM type mask, and to provide a method of manufacturing a mask of a semiconductor device that can reduce foreign contamination, etc. To this end, the present invention, the first material layer and the first Preparing a substrate on which two material layers are stacked; Sequentially coating a first photoresist and a second photoresist containing silicon on the substrate; Exposing and developing the second photoresist to form a second photoresist pattern; Etching the first photoresist using an O 2 plasma as the second photoresist pattern as an etch mask to form a first photoresist pattern; Etching the second material layer and a portion of the first material layer using at least the first photoresist pattern as an etching mask; Isotropically etching the first photoresist pattern using an O 2 plasma until a shield is formed in the second material layer to form a first photoresist pattern having a smaller width than the pattern width of the second material layer step; Etching the second material layer by using the first photoresist pattern as an etch mask to form a structure in which the second material layer is laminated in a smaller width than the first material layer; And it provides a mask manufacturing method of a semiconductor device comprising the step of removing the first photoresist pattern. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100930381-B1 |
| priorityDate | 2005-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.