http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060113409-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2006-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5407164e7d28e320831edfccb095c713 |
| publicationDate | 2006-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060113409-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | It is an object of the present invention to provide a method for manufacturing a semiconductor device which can suppress side etching of a metal film and form a wiring having a good shape.n n n In the method of manufacturing a semiconductor device of the present invention, a metal film is formed on a semiconductor substrate, a hard mask is formed on the metal film, the obtained substrate is installed in a processing chamber, and the pressure inside the processing chamber is reduced to a predetermined pressure. Supplying an etching gas into the processing chamber, generating a plasma of the etching gas into the processing chamber, and patterning a metal film with the generated plasma, wherein the etching gas contains an unsaturated hydrocarbon gas. |
| priorityDate | 2005-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 33.