http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060113270-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66621 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2005-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2010f377a84f4beb5be80bdba983121d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40131686d8abd4d05cf079a9b422fa5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34075a08e1c8ab29cbd98fe4622cc03f |
| publicationDate | 2006-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060113270-A |
| titleOfInvention | Method of manufacturing semiconductor device using recess gate process |
| abstract | The present invention is to provide a method of manufacturing a semiconductor device that can prevent the occurrence of the peaks in the boundary region between the active region and the field oxide film during the recess gate process, the method of manufacturing a semiconductor device of the present invention is formed Forming a pad oxide film on the silicon substrate, forming a mask pattern on the pad oxide film to open a gate area of the silicon substrate, and etching the gate area using the mask pattern as an etch barrier Forming a recess pattern having a protruding shape of a smooth round profile and having an indented shape ('∩' shape) of a sharp profile, and forming a gate oxide film on the entire surface along the profile of the recess pattern And a gate having a lower portion embedded in the recess pattern on the gate oxide layer. Forming a phosphorus, as described above, the present invention can improve the refresh characteristics of the semiconductor device by removing the recess etched shape during the manufacturing of the semiconductor device using the recess gate process, and the manufacture of the semiconductor device There is an effect that can improve the yield. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100829599-B1 |
| priorityDate | 2005-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.