| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02183
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02178
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31616
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76841
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3141
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-515 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| filingDate |
2003-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_117708fc50e8ac841fd2620bffff27a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3d1b4a49fd1a27539f0c1f1c6c63026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47581a5c589b38f9a7c18e0639b6d498 |
| publicationDate |
2006-10-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20060110378-A |
| titleOfInvention |
Atomic layer deposition method |
| abstract |
A first precursor gas flows to the substrate inside the chamber to form a first monolayer on the substrate. The second precursor gas, which is different from the first precursor gas and the composition, flows to the first monolayer inside the chamber under surface microwave plasma conditions inside the chamber, thereby reacting with the first monolayer and the second monolayer different from the composition. Two monolayers are formed on the substrate. The second monolayer comprises the first monolayer and the second precursor component. In one embodiment, the first and second precursor flows are repeated continuously to form a mass of material on the substrate of the second monolayer composition. Other additional embodiments are contemplated. |
| priorityDate |
2002-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |