| abstract |
The present invention relates to a separate unit pixel for an image sensor and a method of manufacturing the same, which provide a capability to cope with various incident angles of light incident on a photodiode, and secure a incident angle margin so that a zoom function can be mounted in a small camera module. In accordance with an embodiment of the present invention, a separate unit pixel of an image sensor having a three-dimensional structure includes a photodiode, a transfer transistor, and a floating diffusion region node of an electrostatic role for changing a charge amount into a voltage, each node of the floating diffusion region, and the transfer transistor. A first wafer composed of a pad for connecting to an outside of the chip; Residual sub-circuits and other readout circuits, such as reset transistors, source follow transistors, and transistors for disconnect switches, vertical / horizontal decoders, correlated nested sampling (CDS) circuits involved in sensor operation and image quality, analog circuits, and analog-to-digital converters. A second wafer including an ADC, a digital circuit, and a pad for connecting the pixels; And connecting means for connecting the conductive pad of the first wafer and the conductive pad of the second wafer.n n n According to the present invention, since the area of the photodiode and the area of the pixel are made almost the same size, an image sensor having a good sensitivity can be manufactured without the microlens, and since the photodiode is located on the top layer, it is basically used in the auto focus or magnification function. Therefore, it is possible to secure an extra angle of incidence of incident light that the sensor must tolerate. |