http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060105857-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B65D85-72 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B65D21-0204 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2005-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7daac5ea37a9261532176d201ed0555c |
| publicationDate | 2006-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060105857-A |
| titleOfInvention | Trench isolation film formation method for semiconductor devices |
| abstract | A trench device isolation film forming method of a semiconductor device of the present invention includes forming a mask film pattern on a semiconductor substrate; Forming a trench in the semiconductor substrate by an etching process using the mask layer pattern as an etching mask; Depositing a sidewall oxide film, a liner nitride film and a liner oxide film in the trench; Forming a liner high density plasma oxide film on the trench and the semiconductor substrate with high density plasma equipment; Adding hydrogen on the liner high density plasma oxide film to form a first high density plasma oxide film; Removing an overhang of the first high density plasma oxide film by performing a first etching on the first high density plasma oxide film; Performing a plasma treatment by including a mixed gas of hydrogen and helium in the first high density plasma oxide film; Removing the residual oxide film by using a wet etching solution on the semiconductor substrate; And depositing a buried oxide film filling the semiconductor substrate and the trench.n n n n Trench device isolation film, DED process, liner high density plasma oxide film |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100864628-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108054078-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100880342-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8148267-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7713887-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100818711-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7964461-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8163627-B2 |
| priorityDate | 2005-04-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.