http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060099658-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E03C1-298 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1296 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/E03C1-281 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2005-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c9709ada9640bdc97867778b9973934 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f52f06098c5daf76936df64c7f4415e5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b47cc63921c2eff47790e9d0bd361332 |
| publicationDate | 2006-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060099658-A |
| titleOfInvention | Thin Film Transistor, Thin Film Transistor Display Panel and Manufacturing Method Thereof |
| abstract | The present invention relates to a thin film transistor, a thin film transistor array panel and a manufacturing method thereof. First and second electrodes separated from each other are formed on the substrate, and a silicon film in which amorphous and polycrystalline silicon are mixed is laminated by sputtering or chemical vapor deposition, and then the silicon film is patterned to form a semiconductor. A gate insulating film is formed on the semiconductor, a third electrode facing the semiconductor is formed thereon, a protective film is formed on the third, and a pixel electrode is formed thereon. In this manner, a thin film transistor and a thin film transistor array panel including polycrystalline silicon excellent in mobility without injecting impurities separately can be formed.n n n n Organic light emitting member, thin film transistor, polycrystalline silicon, sputtering, chemical vapor deposition |
| priorityDate | 2005-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.