| abstract |
The present invention relates to a process for forming modified semiconductor layers. The process includes introducing a chlorine containing gas (eg, hydrogen chloride, chlorine, carbon tetrachloride, and trichloroethane) onto the wafer while heating the wafer. In one example, the chlorine containing gas is introduced during a condensation process over a semiconductor layer that is used as a template layer to form a strained semiconductor layer (eg, strained silicon). In other examples, the chlorine containing gas is introduced during the post bake of the wafer after the condensation operation. |