| abstract |
The present invention relates to a method for manufacturing a nanogap or a nanofield effect transistor (nanoFET) for a molecular device or a bio-sensor and its structure, and in detail, using a thin film of a molecule or its size The present invention relates to a highly reproducible nanogap fabrication method and a nanoFET fabricated by the fabrication method.n n n Method of manufacturing a nanogap according to the present invention, (a) sequentially forming a silicon substrate, an insulating film, a first metal layer and a hard mask; (b) etching the first metal layer using the mask pattern as a mask; (c) forming a self-assembled monolayer (SAM) on the side of the first metal layer to form a nanogap on the silicon substrate; (d) depositing a metal to form a second metal layer on the silicon substrate; (e) etching the hard mask formed in step (a) to remove the metal deposited on the hard mask by using lift-off fixing; And (f) etching the SAM formed in step (c) to form a nanogap.n n n n Molecular device, Molecular device, bio-sensor, nanogap, nanoFET, SAM, ALD |