http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060078385-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6f1cdac90c4272d2ed510122d7153738 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B60Y2400-306 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01L9-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-84 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01L9-00 |
| filingDate | 2004-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e265ea8c9dda2a8ae641ad681af9925c |
| publicationDate | 2006-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060078385-A |
| titleOfInvention | Manufacturing method of pressure sensor |
| abstract | The present invention includes sequentially forming a first diffusion barrier layer, a first insulating layer, an etch stop layer, and a second insulating layer on an upper portion of a lower metal wiring; Etching the second insulating layer, the etch stop layer, and the first insulating layer of the pressure sensor predetermined region to form a pressure sensor region, and then forming a polyimide layer to bury the pressure sensor region; Etching the second insulating layer, the etch stop layer, the first insulating layer, and the first diffusion barrier layer in the metal wiring planning area to form a damascene pattern and form an upper metal wiring to fill the damascene pattern; Forming an opening for exposing the polyimide layer by forming a second diffusion barrier layer over the entire surface and then etching the second diffusion barrier layer and the polyimide layer having a predetermined thickness with a predetermined width; Removing the polyimide layer through the opening; Forming a TaN layer over the entire surface, wherein the TaN layer is formed to extend by a predetermined depth into the space where the polyimide layer is removed through the opening; Etching away the TaN layer on top of the upper metal wiring and forming an isolation layer and an interlayer insulating film over the entire surface; And removing the interlayer insulating film on the pressure sensor region after forming a metal pad connected to the upper metal wiring on the interlayer insulating film.n n n n Opening, TaN layer, polyimide layer |
| priorityDate | 2004-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.