http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060078067-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3a17dc10b5bd6e5f0df2ce1aab3bbdce |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2004-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0090597aa1167861e72ae75485b9308c |
| publicationDate | 2006-07-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060078067-A |
| titleOfInvention | Wiring Formation Method of Semiconductor Device |
| abstract | In the early stage of the gap-fill of the ECP process, an accelerator may be coated to induce a normal gap-fill, and in the later stage of the gap-fill, residual plating may be performed by using an electrolyte containing a low concentration of the accelerator. The present invention relates to a method for forming a wiring of a semiconductor device to solve the problem caused by the excess of the accelerator, the method comprising: forming an interlayer insulating film on the semiconductor substrate in a semiconductor substrate having a transistor and various elements for forming the semiconductor device And selectively forming a contact hole by patterning an interlayer insulating film on the upper portion of the wiring, forming a metal seed layer in a predetermined portion including the inside of the contact hole, and using an accelerator on a surface of the metal seed layer. Gap-filling the inside of the contact hole after coating, and adding an electrolyte to the inside of the contact hole. And performing a remaining W plating, including the step of forming the wiring by removing the interlayer insulating film surface of the top metal layer is characterized in that formed.n n n n Copper wiring, accelerator, ECP |
| priorityDate | 2004-12-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23978 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID418354341 |
Total number of triples: 15.