http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060073231-A

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823468
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2004-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_53216ef9600af9d3d516410cf2192856
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publicationDate 2006-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20060073231-A
titleOfInvention Manufacturing method of semiconductor device
abstract According to an aspect of the present invention, there is provided a method including: (1) forming a gate in a cell region in a substrate in which a cell region and a peripheral circuit region are divided; (2) depositing an oxide film, a nitride film spacer, and an oxide film spacer on the entire surface of the product of step (1); (3) forming a photoresist pattern which opens the cell region by applying photoresist on the resultant of step (2), exposing and developing; (4) hard baking and shrinking the photoresist pattern; (5) A method of manufacturing a semiconductor device comprising the step of removing the residue of the photoresist pattern remaining in the cell region with oxygen plasma. n n n n Semiconductor device, word line
priorityDate 2004-12-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

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Total number of triples: 23.