| abstract |
The present invention relates to a method of forming a dielectric film of a semiconductor device capable of improving dielectric properties and leakage current characteristics. To this end, in the present invention, a method of depositing a ZrO 2 film with a thickness that is not continuously deposited on a wafer, and the ZrO Provided is a dielectric film forming method comprising depositing an Al 2 O 3 film to a thickness that is not continuously deposited on the wafer including two films, and a method of forming a capacitor of a semiconductor device using the same.n n n n Semiconductor element, capacitor, dielectric film |