http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060070119-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b1007735376d07808ebe297f823b2829 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6708 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3063 |
| filingDate | 2004-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b389b5b9102f030969c24d5bc5ae39b8 |
| publicationDate | 2006-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060070119-A |
| titleOfInvention | Semiconductor device manufacturing apparatus and method |
| abstract | The present invention relates to an apparatus and method for manufacturing a semiconductor device, which allows the etching process to be performed by selectively using at least two kinds of etching solutions according to the progress of the etching process. In the apparatus for manufacturing a semiconductor device according to the present invention, a plurality of etching solution tanks for storing different etching solutions for etching different metal layers, a cleaning solution tank for storing a cleaning solution, and a substrate on which any one metal layer is formed are supplied. A plurality of etching process baths for etching the metal layer by receiving the etching solution from one of a plurality of etching solution tanks, and an etching solution for etching the metal layer formed on the substrate among the different etching solutions are supplied to the respective process baths. And a control unit for controlling the cleaning solution to be supplied to each of the etching process baths.n n n According to this configuration, the present invention selectively uses at least two kinds of etching solutions to etch and pattern each metal layer on the substrate in accordance with the production situation of the etching process. Accordingly, the present invention can improve the productivity by preventing the loss due to the delay of the etching process.n n n n Etching Process, Etching Solution, Process Bath, Valve, Pump |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160083285-A |
| priorityDate | 2004-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID453983605 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID180504 |
Total number of triples: 16.