| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b3310ea86f3c492f6c09d7be6592866d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34326 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y20-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-30 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 |
| filingDate |
2004-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94ebb0992cc5924da1367efa25fe7af2 |
| publicationDate |
2006-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20060069038-A |
| titleOfInvention |
Semiconductor laser diode |
| abstract |
A semiconductor laser diode is disclosed. The disclosed semiconductor laser diode includes a lower clad layer formed on a substrate; An active layer on the lower clad layer; And an upper clad layer formed on the active layer and having a ridge projecting in a vertical direction. In the upper clad layer, impurities on which both sides of the ridge diffuse impurities inhibiting high-order lateral mode oscillation. The layer is formed. The impurity is vacancy or Zn ions. |
| priorityDate |
2004-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |