http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060068113-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02664 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 2004-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8fd8f53a27160c37da9cf2d91b578652 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c57b3efdcddb7ad07e20aa90a501c20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33a7f5ce98dfe4873bc5a75aa481a54d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cecf89df87164bc9c7a937ee84f8926 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6343a0420621b52619bb48e04e3071f |
| publicationDate | 2006-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060068113-A |
| titleOfInvention | Thin film transistor array panel and method for manufacturing same |
| abstract | A method of manufacturing a thin film transistor array panel according to the present invention may include forming a gate line on a substrate, stacking a gate insulating film, an intrinsic semiconductor layer, an impurity semiconductor layer, and first to third conductive films, and forming a first on the third conductive film. Forming a photoresist film including one portion and a second portion having a thickness thinner than the first portion, forming a data line by sequentially etching the third to first conductive films using the photoresist film as a mask, and Removing the second portion to expose the third conductive film, etching the third to first conductive films in order to form a drain electrode, and exposing the impurity semiconductor layer to oxygen and fluorine (F) supply gas. Etching the impurity semiconductor layer to form an ohmic contact, performing an oxygen plasma, and removing the photosensitive film. And a step.n n n In this manner, the leakage current can be reduced by performing plasma treatment using a mixed gas of SF6 and O2 and an O2 gas before and after etching the impurity semiconductor, respectively. As a result, uneven defects appearing on the screen can be solved and a reliable thin film transistor array panel can be provided.n n n n Thin film transistor, display panel, leakage current, plasma, chamber, 4 sheets |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101293130-B1 |
| priorityDate | 2004-12-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.