http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060065766-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2004-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f755f5d7146a3991406f2a2c99982b5b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fdc15f4c7a394326546ceeccf892042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e1b302558e83539524fd2cfe8bc243b9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dcd61dbf88b3972d6ee54f019ce0db2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4eaab5be540b2a48cc1ac88adf52c690 |
| publicationDate | 2006-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060065766-A |
| titleOfInvention | Wafer Dechucking Method |
| abstract | The present invention relates to a wafer dechucking method capable of removing a polymer adhered on an electrostatic chuck of a semiconductor plasma device to prevent damage to the wafer and missed wafer alignment during de-chucking. According to the present invention, after the wafer is unloaded from the chamber, a predetermined amount of oxygen gas is supplied to the chamber at a predetermined pressure condition to prepare a plasma, and then the oxygen gas has a predetermined pressure condition and a predetermined pressure. RF power is first applied to remove the polymer attached to the electrostatic chuck, and then the oxygen gas and the removed polymer are discharged from the chamber, and then a predetermined amount of sulfur fluoride gas is supplied to the chamber, and a predetermined pressure condition and a predetermined Applying power to secondaryly remove the polymer attached to the electrostatic chuck, and then the sulfur fluoride gas and the removed polymer is discharged from the chamber, and then a predetermined amount of argon gas is supplied to the chamber, and a predetermined pressure condition and a predetermined A third power is applied to remove the polymer attached to the electrostatic chuck by applying power. Next, the wafer is loaded onto the electrostatic chuck in the chamber and the main process is performed on the wafer using plasma, and finally the lift pin is raised to dechuck the wafer.n n n n Plasma Apparatus, De-chucking, Sticking, Etching Process, Polymer |
| priorityDate | 2004-12-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.