http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060064998-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate | 2004-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0b35ecd8819c38935d88770460cf4ce5 |
| publicationDate | 2006-06-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060064998-A |
| titleOfInvention | Deep contact hole formation method of semiconductor device |
| abstract | The present invention solves a phenomenon in which the bottom of a deep contact hole, which occurs during a deep contact hole forming process of a semiconductor device using a hard mask, does not open, and a bending (or bending) phenomenon of a deep contact hole profile is solved, thereby contacting an underlying conductive layer. The present invention relates to a method for forming a deep contact hole of a semiconductor device capable of increasing a contact resistance and thereby reducing contact resistance. The present invention provides a semiconductor substrate having a ground conductive layer formed in an interlayer insulating film; Forming a hard mask on the semiconductor substrate, the opening of the upper portion having a larger width than the opening of the lower portion; A method of forming a deep contact hole in a semiconductor device, the method including forming a deep contact hole through which an underlying conductive layer is exposed by performing an etching process using the hard mask. n n n n Semiconductor element, deep contact hole, hard mask, amorphous carbon film, SiON film |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100900774-B1 |
| priorityDate | 2004-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.