http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060055774-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32009 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate | 2004-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d6b2fb678a776bf42eaab50e0cac166 |
| publicationDate | 2006-05-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060055774-A |
| titleOfInvention | Chemical vapor deposition apparatus |
| abstract | Disclosed is a chemical vapor deposition apparatus in which a plasma generator is provided between a reaction chamber and an exhaust line. The chemical vapor deposition apparatus according to the present invention includes a reaction chamber in which a deposition process is performed, and an exhaust line for exhausting a by-product or residual gas from the reaction chamber, and exhausts the effluent from the reaction chamber in a vaporized state. In order to supply the line, a plasma generator is installed between the reaction chamber and the exhaust line.n n n n Nitride film, by-products, powder, exhaust lines. Plasma, vaporization |
| priorityDate | 2004-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 13.