http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060054140-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c5520dd38cc403678d9f91e0b0ee95fb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76235 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76 |
| filingDate | 2005-11-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a92332f62a1f5c73ee4878d2aa5c9a18 |
| publicationDate | 2006-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060054140-A |
| titleOfInvention | Trench separation method of semiconductor device |
| abstract | The present invention includes the steps of depositing a pad oxide film and a nitride film sequentially on a semiconductor substrate and then selectively removing the oxide film and the nitride film to form a mask pattern; Forming a trench region in the semiconductor substrate using the formed mask pattern; Depositing a thermal oxide film on the sidewalls and bottom of the formed trench region by thermal oxidation; Depositing a first buried oxide film having a film thickness such that the trench region is not completely filled by a thermal CVD method using SiH 4 / N 2 O gas on the semiconductor substrate having the trench region; Depositing a plasma oxide film, which is a second buried oxide film, by an HDP plasma CVD method so that the trench region is filled with the film; And removing the upper portions of the first and second buried oxide films by CMP method (chemical mechanical polishing) using the nitride film as a stopper, and then etching and removing the nitride film and the pad oxide film, wherein the first buried oxide film is removed. Provided is a trench isolation method for a semiconductor device, characterized in that the SiH 4 / N 2 0 gas flow rate ratio in the step of depositing the oxide is set at a ratio that can suppress the generation of fine foreign matter in the first buried oxide film. .n n n n Semiconductor Devices, Thermal CVD, Trench Isolation, Devots, Voids |
| priorityDate | 2004-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419579069 |
Total number of triples: 13.