| abstract |
The vertical CVD apparatus includes a supply system configured to supply process gas into the process chamber and a control section configured to control the operation of the apparatus. The supply system includes a plurality of first discharge holes connected to the first reaction gas line to supply the first reactant gas and a plurality of second discharge holes connected to the second reaction gas line to supply the second reactant gas. Each set of the first discharge hole and the second discharge hole is arranged in the vertical direction at a position adjacent the edge of the target substrate so as to be distributed over the entire vertical length of the target substrates stacked at predetermined intervals. The control section controls the supply system to alternately supply the first and second reactant gases, thereby forming a thin film derived from the first and second reactant gases on the target substrate.n n n n Vertical CVD apparatus, process chamber, process gas, supply system, control section, discharge hole, target substrate |