http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060048294-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-56 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-29 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F1-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F1-56 |
| filingDate | 2005-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af86b7b6fbd5acfb58905a60a1994cf1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5a697c74496b682eac5b615607ae9de |
| publicationDate | 2006-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060048294-A |
| titleOfInvention | Manufacturing Method of Semiconductor Device |
| abstract | The present invention provides a method of manufacturing a semiconductor device in which a desired pattern is formed on a wafer by using a mask of high precision that can be manufactured in a simplified process. On the main surface of the quartz glass substrate 1, a relatively narrow groove pattern 5a and a groove pattern 5b wider than the groove pattern 5a are formed, and in the relatively wide groove pattern 5b, For example, the light shielding film 6 which consists of a resist film is formed. The specific manufacturing method of this mask is patterned by apply | coating a resist film on the quartz glass substrate 1, and performing an exposure and image development process. Groove patterns 5a and 5b are formed on the quartz glass substrate 1 using the patterned resist film as a mask (dry etching). Subsequently, after removing the patterned resist film, a new resist film is applied. The light shielding film 6 is formed only in the groove pattern 5b by patterning.n n n n Mask, light shielding film, groove pattern, resist film, gate electrode |
| priorityDate | 2004-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.