| abstract |
The present invention is directed to the action of at least one compound (1), acid in which acid is generated by irradiation of radiation or electron beam, selected from the following formulas (1a), (1b), (1c), (1d) and (1e) There is provided a chemically amplified positive resist material containing a high molecular polymer and a basic compound whose solubility in an alkaline developer is changed.n n n n n n n n Furthermore, according to the present invention, the alkali dissolution rate contrast before and after exposure is high, high sensitivity and high resolution are obtained, and the time-lapse stability after exposure is very excellent, and in particular, the pattern forming material and the mask pattern forming material by electron beam lithography for ultra-LSI production It is possible to provide a chemically amplified positive type resist material which is preferable.n n n Chemically amplified positive resist materials, photoacid generators, alkali dissolution rate contrast, pattern forming materials |