| abstract |
The present invention comprises 0.1 to 30% by weight of oxidizing agent, 0.01 to 3% by weight of inorganic salt or inorganic acid, 0.01 to 4% by weight of inhibitor, 0.1 to 30% by weight of abrasive, 0 to 15% by weight of complexing agent and residual amount of water, A multistage aqueous composition useful for polishing tantalum barrier material and copper from semiconductor wafers having a pH of 1.5 to 6 is provided.n n n Semiconductor Wafers, Chemical Mechanical Planarization (CMP), Copper, Barrier Materials |