http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060038585-A
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1a492183be65153abfa7dec00d51c816 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B12-482 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
filingDate | 2004-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fd7a88eb63172720ea1bfa19d641366c |
publicationDate | 2006-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20060038585-A |
titleOfInvention | Deep contact hole formation method of semiconductor device |
abstract | The present invention is to provide a method for forming a deep contact hole of a semiconductor device capable of suppressing the reduction of CD and ensuring a sufficient bottom CD when forming a deep contact hole. To this end, the present invention provides an insulating film on a conductive layer. Making; Forming a mask pattern on the insulating film; Etching a portion of the insulating layer using the mask pattern as an etching mask; Lowering the pressure of the chamber and evacuating the polymeric residual gas to remove the polymeric residual gas generated during the etching process; And forming an open portion for exposing the conductive layer by etching another portion of the insulating layer which remains the mask pattern as an etch mask, thereby forming a deep contact hole in the semiconductor device. n n n n Deep contact holes, bit lines, hard masks, polymeric residual gases, metal wiring and exhaust. |
priorityDate | 2004-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 17.