http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060036629-A

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filingDate 2004-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0591b8d588cfd2f423290dc411e5b0eb
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publicationDate 2006-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20060036629-A
titleOfInvention High purity indium manufacturing method and apparatus
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a purification method and apparatus for high purity of indium, which is a raw material of an indium tin oxide (ITO) target used in a transparent conductive film of a liquid crystal display.n n n The present invention relates to molten salt electrolytic refining in which tin separation efficiency and productivity are improved at least three times compared to conventional aqueous solution electrolytic refining in the high purity purification of tin containing tin as a main impurity. The present invention relates to a method and apparatus for purifying indium by electrolytic refining at a temperature not lower than the melting point of an electrolyte using indium monochloride or a complex compound of indium monochloride and zinc chloride as an electrolyte.n n n n Indium, molten salt electrolytic, indium monochloride, zinc chloride
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101719307-B1
priorityDate 2004-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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