http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060033085-A
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4408 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
filingDate | 2004-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ddb52d8fa4f1342f030a7b9ae494013f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d460dceadc9ba787b18af003223a3bbf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed655af68bb3424e39cc4d10c9aafdca |
publicationDate | 2006-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | KR-20060033085-A |
titleOfInvention | Metal layer formation method used in semiconductor device manufacturing |
abstract | The present invention relates to a method for forming a metal layer suitable for the manufacture of a semiconductor device capable of increasing or maximizing the production yield, the method of forming the mixed gas consisting of hydrogen gas and metal chloride compound gas in a chamber having a predetermined closed space And simultaneously supplying purge gas for a predetermined time to form a first metal layer on the semiconductor substrate on which the conductive layer is exposed by a plasma chemical vapor deposition method; And alternately supplying the hydrogen gas and the metal chloride compound gas alternately with a predetermined time while the purge gas is continuously supplied to the chamber to form a second metal layer on the first metal layer by the plasma chemical vapor deposition method. By including the step, the plasma chemical vapor deposition method, which is a low temperature process, can be prevented from deterioration of the semiconductor device due to high heat when forming the metal layer, thereby improving production yield.n n n n Titanium chloride (TiCl4), argon (Ar), plasma enhanced chemical vapor deposition (PECVD), radio frequency (RF) |
priorityDate | 2004-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.