http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20060031678-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d669af06cb2abbcd6823699582a97002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2004-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ee9747710d735188a25c4e8e0538fab http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a4ed420d6b990e2571f7ca63c49864c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_83c9dabde3d0d47d901f770e95760e1c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_34a704bef2b20440ce15b23c92f84b10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_960ef65b33c188a84795c7fe31e8d5a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a8808a8b2459f0910398113da7a45a69 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41e60503c8382eb2be401c233f2ab639 |
| publicationDate | 2006-04-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20060031678-A |
| titleOfInvention | Manufacturing method of low dielectric constant insulating film |
| abstract | The present invention relates to a method for producing a low dielectric constant insulating film on a semiconductor or an electric circuit, and to a low dielectric constant insulating film prepared by the method, including the use of an incompletely condensed polyhedral oligomeric silsesquinoxane of the formula for the preparation of a film.n n n [(R a X b SiO l.5 ) m (R c Y d SiO) n ]n n n In the above formula,n n n a and b are 0 to 1, c and d are 1, the sum of m and n is 3 or more, the sum of a and b is 1, n and m are 1 or more,n n n R is a hydrogen atom or an alkyl, cycloalkyl, alkenyl, cycloalkenyl, alkynyl, cycloalkynyl, aryl or heteroaryl group, each substituted or unsubstituted,n n n X represents an oxy, hydroxyl, alkoxy, carboxyl, silyl, silyloxy, halogen, epoxy, ester, fluoroalkyl, isocyanate, acrylate, methacrylate, nitrile, amino or phosphine group, or such group of type X A substituent of type R containing one or more,n n n Y is hydroxyl, alkoxy or a substituent of type 0-SiZ 1 Z 2 Z 3 , wherein Z 1 , Z 2 and Z 3 are fluoroalkyl, alkoxy, silyloxy, epoxy, ester, acrylate, methacrylate Or a nitrile group, or a substituent of type R, the same or different,n n n The substituents of type R are the same or different, as well as the substituents of type X and Y are each the same or different and include one or more hydroxyl groups as substituents of type Y. |
| priorityDate | 2003-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.